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| VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 220V 240V RDS(ON) (max) 1.25 1.25 ID(ON) (min) 5.0A 5.0A Order Number / Package TO-92 -- VN2224N3 20-Pin C-Dip VN2222NC -- High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options S S S G1 G2 G3 G4 S 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 S S NC D1 D2 D3 D4 NC S S Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 S BVDSS BVDGS 20V SGD S TO-92 -55C to +150C 300C top view 20-pin Ceramic DIP Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2222/VN2224 Thermal Characteristics Package TO-92 ID (continuous)* 540mA ID (pulsed) 5.0A Power Dissipation @ TC = 25C 1.0W jc ja IDR* 540mA IDRM 5.0A C/W 125 C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN2224 VN2222 Min 240 220 1.0 -4 1 3.0 -5 100 50 5 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Typ Max Unit V V mV/C nA A mA A Conditions VGS = 0V, ID = 5mA VGS = VDS, ID = 5mA VGS = VDS, ID = 5mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 2A VGS = 10V, ID = 2A VGS = 10V, ID = 2A VDS = 25V, ID = 2A VGS = 0V, VDS = 25V f = 1 MHz VGS(th) V GS(th) IGSS IDSS ON-State Drain Current 2 5 10 1.0 0.9 1.0 1.0 2.2 300 85 20 6 16 65 30 0.8 500 350 150 35 15 25 90 60 1.0 1.5 1.25 1.4 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time %/C pF ns V ns Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD = 25V ID = 2A RGEN = 10 VGS = 0V, ISD = 100mA VGS = 0V, ISD = 1A VDD RL OUTPUT D.U.T. VN2222/VN2224 Typical Performance Curves Output Characteristics 10 10 Saturation Characteristics VGS = 10V 8 8V 6V 8 VGS = 10V 8V ID (amperes) ID (amperes) 6 6 6V 4V 4 4 4V 2 2 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 3V 10 VDS (volts) Transconductance vs. Drain Current 5 10 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V 4 GFS (siemens) PD (watts) TA = 25C TA = 125C 3 TA = -55C 5 2 1 TO-92 0 0 5 10 0 25 50 75 100 125 150 0 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 1 0.8 ID (amperes) 0.6 0.1 TO-92 (DC) 0.01 0.4 0.2 TO-92 TC = 25C PD = 1W 0.001 1 TC = 25C 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 VN2222/VN2224 Typical Performance Curves BVDSS Variation with Temperature 5 1.1 4 On-Resistance vs. Drain Current V GS = 5V BVDSS (normalized) RDS(ON) (ohms) 3 1.0 2 1 0.9 0 -50 0 50 100 150 0 2 4 6 VGS = 10V 8 10 Tj (C) Transfer Characteristics 10 1.4 ID (amperes) V(th) and RDS Variation with Temperature 2.4 VDS = 25V 1.2 Vth @ 5mA ID (amperes) 25C 125C VGS(th) (normalized) 1.0 1.6 5 0.8 1.2 0.6 0.8 0 0 2 4 6 8 10 0.4 -50 0 50 100 150 0.4 VGS (volts) Capacitance vs. Drain-to-Source Voltage 400 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 300 CISS 8 VDS = 10V C (picofarads) VGS (volts) 6 VDS = 40V 733 pF 200 4 100 COSS CRSS 2 300 pF 0 0 0 10 20 30 40 0 2 4 6 8 10 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) TA = -55C RDS @ 10V, 2A 2.0 |
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